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PATENT REGISTER
Status Lapsed Patent No. 2816607
Application No. 14184889.5 Date of Filing 05/09/2006
Date Grant Published 15/11/2017 Application Published 24/12/2014
Title of Invention Field effect transistor using amorphous oxide film as channel layer
Priority
Priority Country Filing Date Application No.
 Japan  06/09/2005  2005258263
 Japan  15/08/2006  2006221552
Current Proprietor Canon Kabushiki Kaisha
30-2 Shimomaruko 3-chome
Ohta-ku
Tokyo 146-8501
JAPAN
Publication Language English
Translation Received Date
07/06/2019 Patent lapsed due to non-payment of Patent Renewal Fee in respect of year 13.